Cargando…

Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

Detalles Bibliográficos
Autores principales: Bretos, Iñigo, Jiménez, Ricardo, Tomczyk, Monika, Rodríguez-Castellón, Enrique, Vilarinho, Paula M., Calzada, M. Lourdes
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4779985/
https://www.ncbi.nlm.nih.gov/pubmed/26948155
http://dx.doi.org/10.1038/srep22499
_version_ 1782419691106467840
author Bretos, Iñigo
Jiménez, Ricardo
Tomczyk, Monika
Rodríguez-Castellón, Enrique
Vilarinho, Paula M.
Calzada, M. Lourdes
author_facet Bretos, Iñigo
Jiménez, Ricardo
Tomczyk, Monika
Rodríguez-Castellón, Enrique
Vilarinho, Paula M.
Calzada, M. Lourdes
author_sort Bretos, Iñigo
collection PubMed
description
format Online
Article
Text
id pubmed-4779985
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-47799852016-03-09 Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices Bretos, Iñigo Jiménez, Ricardo Tomczyk, Monika Rodríguez-Castellón, Enrique Vilarinho, Paula M. Calzada, M. Lourdes Sci Rep Corrigenda Nature Publishing Group 2016-03-07 /pmc/articles/PMC4779985/ /pubmed/26948155 http://dx.doi.org/10.1038/srep22499 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Corrigenda
Bretos, Iñigo
Jiménez, Ricardo
Tomczyk, Monika
Rodríguez-Castellón, Enrique
Vilarinho, Paula M.
Calzada, M. Lourdes
Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
title Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
title_full Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
title_fullStr Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
title_full_unstemmed Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
title_short Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
title_sort corrigendum: active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
topic Corrigenda
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4779985/
https://www.ncbi.nlm.nih.gov/pubmed/26948155
http://dx.doi.org/10.1038/srep22499
work_keys_str_mv AT bretosinigo corrigendumactivelayersofhighperformanceleadzirconatetitanateattemperaturescompatiblewithsiliconnanoandmicroelectronicdevices
AT jimenezricardo corrigendumactivelayersofhighperformanceleadzirconatetitanateattemperaturescompatiblewithsiliconnanoandmicroelectronicdevices
AT tomczykmonika corrigendumactivelayersofhighperformanceleadzirconatetitanateattemperaturescompatiblewithsiliconnanoandmicroelectronicdevices
AT rodriguezcastellonenrique corrigendumactivelayersofhighperformanceleadzirconatetitanateattemperaturescompatiblewithsiliconnanoandmicroelectronicdevices
AT vilarinhopaulam corrigendumactivelayersofhighperformanceleadzirconatetitanateattemperaturescompatiblewithsiliconnanoandmicroelectronicdevices
AT calzadamlourdes corrigendumactivelayersofhighperformanceleadzirconatetitanateattemperaturescompatiblewithsiliconnanoandmicroelectronicdevices