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Controlled synthesis of Ni/CuO(x)/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching

We demonstrate synthesis of Ni/CuO(x)/Ni nanowires (NWs) by electrochemical deposition on anodized aluminum oxide (AAO) membranes. AAO with pore diameter of ~70 nm and pore length of ~50 μm was used as the template for synthesis of NWs. After deposition of Au as the seed layer, NWs with a structure...

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Autores principales: Park, Kyuhyun, Lee, Jang-Sik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4791678/
https://www.ncbi.nlm.nih.gov/pubmed/26975330
http://dx.doi.org/10.1038/srep23069
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author Park, Kyuhyun
Lee, Jang-Sik
author_facet Park, Kyuhyun
Lee, Jang-Sik
author_sort Park, Kyuhyun
collection PubMed
description We demonstrate synthesis of Ni/CuO(x)/Ni nanowires (NWs) by electrochemical deposition on anodized aluminum oxide (AAO) membranes. AAO with pore diameter of ~70 nm and pore length of ~50 μm was used as the template for synthesis of NWs. After deposition of Au as the seed layer, NWs with a structure of Ni/CuO(x)/Ni were grown with a length of ~12 μm. The lengths of 1(st) Ni, CuO(x), and 2(nd) Ni were ~4.5 μm, ~3 μm, and ~4.5 μm, respectively. The Ni/CuO(x)/Ni device exhibits bipolar resistive switching behavior with self-compliance characteristics. Due to the spatial restriction of the current path in NW the Ni/CuO(x)/Ni NW devices are thought to exhibit self-compliance behaviour. Ni/CuO(x)/Ni NWs showed bipolar resistive changes possibly due to conducting filaments that are induced by oxygen vacancies. The reliability of the devices was confirmed by data retention measurement. The NW-based resistive switching memory has applications in highly scalable memory devices and neuromorphic devices.
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spelling pubmed-47916782016-03-16 Controlled synthesis of Ni/CuO(x)/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching Park, Kyuhyun Lee, Jang-Sik Sci Rep Article We demonstrate synthesis of Ni/CuO(x)/Ni nanowires (NWs) by electrochemical deposition on anodized aluminum oxide (AAO) membranes. AAO with pore diameter of ~70 nm and pore length of ~50 μm was used as the template for synthesis of NWs. After deposition of Au as the seed layer, NWs with a structure of Ni/CuO(x)/Ni were grown with a length of ~12 μm. The lengths of 1(st) Ni, CuO(x), and 2(nd) Ni were ~4.5 μm, ~3 μm, and ~4.5 μm, respectively. The Ni/CuO(x)/Ni device exhibits bipolar resistive switching behavior with self-compliance characteristics. Due to the spatial restriction of the current path in NW the Ni/CuO(x)/Ni NW devices are thought to exhibit self-compliance behaviour. Ni/CuO(x)/Ni NWs showed bipolar resistive changes possibly due to conducting filaments that are induced by oxygen vacancies. The reliability of the devices was confirmed by data retention measurement. The NW-based resistive switching memory has applications in highly scalable memory devices and neuromorphic devices. Nature Publishing Group 2016-03-15 /pmc/articles/PMC4791678/ /pubmed/26975330 http://dx.doi.org/10.1038/srep23069 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Park, Kyuhyun
Lee, Jang-Sik
Controlled synthesis of Ni/CuO(x)/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
title Controlled synthesis of Ni/CuO(x)/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
title_full Controlled synthesis of Ni/CuO(x)/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
title_fullStr Controlled synthesis of Ni/CuO(x)/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
title_full_unstemmed Controlled synthesis of Ni/CuO(x)/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
title_short Controlled synthesis of Ni/CuO(x)/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
title_sort controlled synthesis of ni/cuo(x)/ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4791678/
https://www.ncbi.nlm.nih.gov/pubmed/26975330
http://dx.doi.org/10.1038/srep23069
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