Cargando…
Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. In our work we employ spatially resolved optical pump-and-probe techniqu...
Autores principales: | , , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4793250/ https://www.ncbi.nlm.nih.gov/pubmed/26980667 http://dx.doi.org/10.1038/srep22901 |
_version_ | 1782421371458945024 |
---|---|
author | Nádvorník, L. Němec, P. Janda, T. Olejník, K. Novák, V. Skoromets, V. Němec, H. Kužel, P. Trojánek, F. Jungwirth, T. Wunderlich, J. |
author_facet | Nádvorník, L. Němec, P. Janda, T. Olejník, K. Novák, V. Skoromets, V. Němec, H. Kužel, P. Trojánek, F. Jungwirth, T. Wunderlich, J. |
author_sort | Nádvorník, L. |
collection | PubMed |
description | Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. In our work we employ spatially resolved optical pump-and-probe technique to investigate these fundamental spin-transport parameters in a model semiconductor system. We demonstrate that in an undoped GaAs/AlGaAs layer, spins are detected at distances reaching more than ten microns at times as short as nanoseconds. We have achieved this unprecedented combination of long-range and high-speed electronic spin-transport by simultaneously suppressing mechanisms that limit the spin life-time and the mobility of carriers. By exploring a series of structures we demonstrate that the GaAs/AlGaAs interface can provide superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex semiconductor heterostructures. We confirm our conclusions by complementing the optical experiments with dc and terahertz photo-conductivity measurements. |
format | Online Article Text |
id | pubmed-4793250 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-47932502016-03-16 Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface Nádvorník, L. Němec, P. Janda, T. Olejník, K. Novák, V. Skoromets, V. Němec, H. Kužel, P. Trojánek, F. Jungwirth, T. Wunderlich, J. Sci Rep Article Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. In our work we employ spatially resolved optical pump-and-probe technique to investigate these fundamental spin-transport parameters in a model semiconductor system. We demonstrate that in an undoped GaAs/AlGaAs layer, spins are detected at distances reaching more than ten microns at times as short as nanoseconds. We have achieved this unprecedented combination of long-range and high-speed electronic spin-transport by simultaneously suppressing mechanisms that limit the spin life-time and the mobility of carriers. By exploring a series of structures we demonstrate that the GaAs/AlGaAs interface can provide superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex semiconductor heterostructures. We confirm our conclusions by complementing the optical experiments with dc and terahertz photo-conductivity measurements. Nature Publishing Group 2016-03-16 /pmc/articles/PMC4793250/ /pubmed/26980667 http://dx.doi.org/10.1038/srep22901 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Nádvorník, L. Němec, P. Janda, T. Olejník, K. Novák, V. Skoromets, V. Němec, H. Kužel, P. Trojánek, F. Jungwirth, T. Wunderlich, J. Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface |
title | Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface |
title_full | Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface |
title_fullStr | Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface |
title_full_unstemmed | Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface |
title_short | Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface |
title_sort | long-range and high-speed electronic spin-transport at a gaas/algaas semiconductor interface |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4793250/ https://www.ncbi.nlm.nih.gov/pubmed/26980667 http://dx.doi.org/10.1038/srep22901 |
work_keys_str_mv | AT nadvornikl longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT nemecp longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT jandat longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT olejnikk longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT novakv longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT skorometsv longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT nemech longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT kuzelp longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT trojanekf longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT jungwirtht longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface AT wunderlichj longrangeandhighspeedelectronicspintransportatagaasalgaassemiconductorinterface |