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Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface

Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. In our work we employ spatially resolved optical pump-and-probe techniqu...

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Autores principales: Nádvorník, L., Němec, P., Janda, T., Olejník, K., Novák, V., Skoromets, V., Němec, H., Kužel, P., Trojánek, F., Jungwirth, T., Wunderlich, J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4793250/
https://www.ncbi.nlm.nih.gov/pubmed/26980667
http://dx.doi.org/10.1038/srep22901
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author Nádvorník, L.
Němec, P.
Janda, T.
Olejník, K.
Novák, V.
Skoromets, V.
Němec, H.
Kužel, P.
Trojánek, F.
Jungwirth, T.
Wunderlich, J.
author_facet Nádvorník, L.
Němec, P.
Janda, T.
Olejník, K.
Novák, V.
Skoromets, V.
Němec, H.
Kužel, P.
Trojánek, F.
Jungwirth, T.
Wunderlich, J.
author_sort Nádvorník, L.
collection PubMed
description Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. In our work we employ spatially resolved optical pump-and-probe technique to investigate these fundamental spin-transport parameters in a model semiconductor system. We demonstrate that in an undoped GaAs/AlGaAs layer, spins are detected at distances reaching more than ten microns at times as short as nanoseconds. We have achieved this unprecedented combination of long-range and high-speed electronic spin-transport by simultaneously suppressing mechanisms that limit the spin life-time and the mobility of carriers. By exploring a series of structures we demonstrate that the GaAs/AlGaAs interface can provide superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex semiconductor heterostructures. We confirm our conclusions by complementing the optical experiments with dc and terahertz photo-conductivity measurements.
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spelling pubmed-47932502016-03-16 Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface Nádvorník, L. Němec, P. Janda, T. Olejník, K. Novák, V. Skoromets, V. Němec, H. Kužel, P. Trojánek, F. Jungwirth, T. Wunderlich, J. Sci Rep Article Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. In our work we employ spatially resolved optical pump-and-probe technique to investigate these fundamental spin-transport parameters in a model semiconductor system. We demonstrate that in an undoped GaAs/AlGaAs layer, spins are detected at distances reaching more than ten microns at times as short as nanoseconds. We have achieved this unprecedented combination of long-range and high-speed electronic spin-transport by simultaneously suppressing mechanisms that limit the spin life-time and the mobility of carriers. By exploring a series of structures we demonstrate that the GaAs/AlGaAs interface can provide superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex semiconductor heterostructures. We confirm our conclusions by complementing the optical experiments with dc and terahertz photo-conductivity measurements. Nature Publishing Group 2016-03-16 /pmc/articles/PMC4793250/ /pubmed/26980667 http://dx.doi.org/10.1038/srep22901 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Nádvorník, L.
Němec, P.
Janda, T.
Olejník, K.
Novák, V.
Skoromets, V.
Němec, H.
Kužel, P.
Trojánek, F.
Jungwirth, T.
Wunderlich, J.
Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
title Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
title_full Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
title_fullStr Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
title_full_unstemmed Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
title_short Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
title_sort long-range and high-speed electronic spin-transport at a gaas/algaas semiconductor interface
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4793250/
https://www.ncbi.nlm.nih.gov/pubmed/26980667
http://dx.doi.org/10.1038/srep22901
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