Cargando…

A new approach for fabrications of SiC based photodetectors

We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectivenes...

Descripción completa

Detalles Bibliográficos
Autores principales: Aldalbahi, Ali, Li, Eric, Rivera, Manuel, Velazquez, Rafael, Altalhi, Tariq, Peng, Xiaoyan, Feng, Peter X.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4796815/
https://www.ncbi.nlm.nih.gov/pubmed/26988399
http://dx.doi.org/10.1038/srep23457
_version_ 1782421842287394816
author Aldalbahi, Ali
Li, Eric
Rivera, Manuel
Velazquez, Rafael
Altalhi, Tariq
Peng, Xiaoyan
Feng, Peter X.
author_facet Aldalbahi, Ali
Li, Eric
Rivera, Manuel
Velazquez, Rafael
Altalhi, Tariq
Peng, Xiaoyan
Feng, Peter X.
author_sort Aldalbahi, Ali
collection PubMed
description We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged.
format Online
Article
Text
id pubmed-4796815
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-47968152016-03-18 A new approach for fabrications of SiC based photodetectors Aldalbahi, Ali Li, Eric Rivera, Manuel Velazquez, Rafael Altalhi, Tariq Peng, Xiaoyan Feng, Peter X. Sci Rep Article We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged. Nature Publishing Group 2016-03-18 /pmc/articles/PMC4796815/ /pubmed/26988399 http://dx.doi.org/10.1038/srep23457 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Aldalbahi, Ali
Li, Eric
Rivera, Manuel
Velazquez, Rafael
Altalhi, Tariq
Peng, Xiaoyan
Feng, Peter X.
A new approach for fabrications of SiC based photodetectors
title A new approach for fabrications of SiC based photodetectors
title_full A new approach for fabrications of SiC based photodetectors
title_fullStr A new approach for fabrications of SiC based photodetectors
title_full_unstemmed A new approach for fabrications of SiC based photodetectors
title_short A new approach for fabrications of SiC based photodetectors
title_sort new approach for fabrications of sic based photodetectors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4796815/
https://www.ncbi.nlm.nih.gov/pubmed/26988399
http://dx.doi.org/10.1038/srep23457
work_keys_str_mv AT aldalbahiali anewapproachforfabricationsofsicbasedphotodetectors
AT lieric anewapproachforfabricationsofsicbasedphotodetectors
AT riveramanuel anewapproachforfabricationsofsicbasedphotodetectors
AT velazquezrafael anewapproachforfabricationsofsicbasedphotodetectors
AT altalhitariq anewapproachforfabricationsofsicbasedphotodetectors
AT pengxiaoyan anewapproachforfabricationsofsicbasedphotodetectors
AT fengpeterx anewapproachforfabricationsofsicbasedphotodetectors
AT aldalbahiali newapproachforfabricationsofsicbasedphotodetectors
AT lieric newapproachforfabricationsofsicbasedphotodetectors
AT riveramanuel newapproachforfabricationsofsicbasedphotodetectors
AT velazquezrafael newapproachforfabricationsofsicbasedphotodetectors
AT altalhitariq newapproachforfabricationsofsicbasedphotodetectors
AT pengxiaoyan newapproachforfabricationsofsicbasedphotodetectors
AT fengpeterx newapproachforfabricationsofsicbasedphotodetectors