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Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature

Purely voltage-driven, repeatable magnetization reversal provides a tantalizing potential for the development of spintronic devices with a minimum amount of power consumption. Substantial progress has been made in this subject especially on magnetic/ferroelectric heterostructures. Here, we report th...

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Detalles Bibliográficos
Autores principales: Gao, Ya, Hu, Jia-Mian, Nelson, C. T., Yang, T. N., Shen, Y., Chen, L. Q., Ramesh, R., Nan, C. W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4814776/
https://www.ncbi.nlm.nih.gov/pubmed/27029464
http://dx.doi.org/10.1038/srep23696
Descripción
Sumario:Purely voltage-driven, repeatable magnetization reversal provides a tantalizing potential for the development of spintronic devices with a minimum amount of power consumption. Substantial progress has been made in this subject especially on magnetic/ferroelectric heterostructures. Here, we report the in situ observation of such phenomenon in a NiFe thin film grown directly on a rhombohedral Pb(Mg(1/3)Nb(2/3))(0.7)Ti(0.3)O(3)(PMN-PT) ferroelectric crystal. Under a cyclic voltage applied perpendicular to the PMN-PT without a magnetic field, the local magnetization of NiFe can be repetitively reversed through an out-of-plane excursion and then back into the plane. Using phase field simulations we interpret magnetization reversal as a synergistic effect of the metastable ferroelastic switching in the PMN-PT and an electrically rotatable local exchange bias field arising from the heterogeneously distributed NiO clusters at the interface.