Conducting LaAlO(3)/SrTiO(3) heterointerfaces on atomically-flat substrates prepared by deionized-water

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO(3) (STO) substrates affects the transport properties of LaAlO(3) (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films...

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Autores principales: Connell, J. G., Nichols, J., Gruenewald, J. H., Kim, D.-W., Seo, S. S. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4817030/
https://www.ncbi.nlm.nih.gov/pubmed/27033248
http://dx.doi.org/10.1038/srep23621
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author Connell, J. G.
Nichols, J.
Gruenewald, J. H.
Kim, D.-W.
Seo, S. S. A.
author_facet Connell, J. G.
Nichols, J.
Gruenewald, J. H.
Kim, D.-W.
Seo, S. S. A.
author_sort Connell, J. G.
collection PubMed
description We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO(3) (STO) substrates affects the transport properties of LaAlO(3) (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.
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spelling pubmed-48170302016-04-05 Conducting LaAlO(3)/SrTiO(3) heterointerfaces on atomically-flat substrates prepared by deionized-water Connell, J. G. Nichols, J. Gruenewald, J. H. Kim, D.-W. Seo, S. S. A. Sci Rep Article We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO(3) (STO) substrates affects the transport properties of LaAlO(3) (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns. Nature Publishing Group 2016-04-01 /pmc/articles/PMC4817030/ /pubmed/27033248 http://dx.doi.org/10.1038/srep23621 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Connell, J. G.
Nichols, J.
Gruenewald, J. H.
Kim, D.-W.
Seo, S. S. A.
Conducting LaAlO(3)/SrTiO(3) heterointerfaces on atomically-flat substrates prepared by deionized-water
title Conducting LaAlO(3)/SrTiO(3) heterointerfaces on atomically-flat substrates prepared by deionized-water
title_full Conducting LaAlO(3)/SrTiO(3) heterointerfaces on atomically-flat substrates prepared by deionized-water
title_fullStr Conducting LaAlO(3)/SrTiO(3) heterointerfaces on atomically-flat substrates prepared by deionized-water
title_full_unstemmed Conducting LaAlO(3)/SrTiO(3) heterointerfaces on atomically-flat substrates prepared by deionized-water
title_short Conducting LaAlO(3)/SrTiO(3) heterointerfaces on atomically-flat substrates prepared by deionized-water
title_sort conducting laalo(3)/srtio(3) heterointerfaces on atomically-flat substrates prepared by deionized-water
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4817030/
https://www.ncbi.nlm.nih.gov/pubmed/27033248
http://dx.doi.org/10.1038/srep23621
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