Cargando…

Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystall...

Descripción completa

Detalles Bibliográficos
Autores principales:	Bragaglia, Valeria, Arciprete, Fabrizio, Zhang, Wei, Mio, Antonio Massimiliano, Zallo, Eugenio, Perumal, Karthick, Giussani, Alessandro, Cecchi, Stefano, Boschker, Jos Emiel, Riechert, Henning, Privitera, Stefania, Rimini, Emanuele, Mazzarello, Riccardo, Calarco, Raffaella
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4817142/ https://www.ncbi.nlm.nih.gov/pubmed/27033314 http://dx.doi.org/10.1038/srep23843

Ejemplares similares

Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
por: Bragaglia, Valeria, et al.
Publicado: (2016)

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
por: Zallo, Eugenio, et al.
Publicado: (2017)

Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
por: Zallo, Eugenio, et al.
Publicado: (2018)

Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys
por: Cecchi, Stefano, et al.
Publicado: (2022)

Role of interfaces on the stability and electrical properties of Ge(2)Sb(2)Te(5) crystalline structures
por: Mio, A. M., et al.
Publicado: (2017)

Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb(2)Te(3) Alloys
por: Bragaglia, V., et al.
Publicado: (2016)

A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials
por: Wang, Jiang-Jing, et al.
Publicado: (2017)

Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe
por: Zhang, Bin, et al.
Publicado: (2016)

Electrical and optical properties of epitaxial binary and ternary GeTe-Sb(2)Te(3) alloys
por: Boschker, Jos E., et al.
Publicado: (2018)

Phonon anharmonicities and ultrafast dynamics in epitaxial Sb(2)Te(3)
por: Bragaglia, V., et al.
Publicado: (2020)

Modeling of switching mechanism in GeSbTe chalcogenide superlattices
por: Yu, Xiaoming, et al.
Publicado: (2015)

Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles
por: Chen, Bin, et al.
Publicado: (2016)

Crystallization Kinetics of GeSbTe Phase-Change Nanoparticles Resolved by Ultrafast Calorimetry
por: Chen, Bin, et al.
Publicado: (2017)

Metric and fault-tolerant metric dimension for GeSbTe superlattice chemical structure
por: Liqin, Liu, et al.
Publicado: (2023)

Coincident-site lattice matching during van der Waals epitaxy
por: Boschker, Jos E., et al.
Publicado: (2015)

High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories
por: Abou El Kheir, Omar, et al.
Publicado: (2021)

Extremely Narrow and Actively Tunable Mie Surface Lattice Resonances in GeSbTe Metasurfaces: Study
por: Xiong, Lei, et al.
Publicado: (2022)

Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films
por: Jaafar, Ayoub H., et al.
Publicado: (2022)

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
por: Song, Sannian, et al.
Publicado: (2015)

Tunable mid-wave infrared Fabry-Perot bandpass filters using phase-change GeSbTe
por: Williams, Calum, et al.
Publicado: (2020)

Reversible optical tuning of GeSbTe phase-change metasurface spectral filters for mid-wave infrared imaging
por: Julian, Matthew N., et al.
Publicado: (2020)

Structural and Electrical Properties of Annealed Ge(2)Sb(2)Te(5) Films Grown on Flexible Polyimide
por: Bertelli, Marco, et al.
Publicado: (2022)

Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films
por: Yimam, Daniel Tadesse, et al.
Publicado: (2022)

Electronic and magnetic properties of H-terminated graphene nanoribbons deposited on the topological insulator Sb(2)Te(3)
por: Zhang, Wei, et al.
Publicado: (2016)

Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy
por: Díaz Fattorini, Adriano, et al.
Publicado: (2022)

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices
por: Casarin, Barbara, et al.
Publicado: (2016)

Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys
por: Chèze, Caroline, et al.
Publicado: (2022)

Vacancy‐Contained Tetragonal Na(3)SbS(4) Superionic Conductor
por: Zhang, Long, et al.
Publicado: (2016)

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials
por: Mitrofanov, Kirill V., et al.
Publicado: (2016)

Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy
por: Huang, Lihong, et al.
Publicado: (2019)

Phase Change Ge-Rich Ge–Sb–Te/Sb(2)Te(3) Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition
por: Kumar, Arun, et al.
Publicado: (2021)

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain
por: Kim, Honggyu, et al.
Publicado: (2018)

Enhanced thermoelectric properties in Sb/Ge core/shell nanowires through vacancy modulation
por: Bhuyan, Prabal Dev, et al.
Publicado: (2021)

Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)(2)(Sb(2)Te(3))(1)](n) Topological Superlattices
por: Bang, Do, et al.
Publicado: (2014)

Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)
por: Yao, Honghao, et al.
Publicado: (2021)

Superconductivity in Topological Insulator Sb(2)Te(3) Induced by Pressure
por: Zhu, J., et al.
Publicado: (2013)

Evidence for a topological excitonic insulator in InAs/GaSb bilayers
por: Du, Lingjie, et al.
Publicado: (2017)

Experimental evidence of hourglass fermion in the candidate nonsymmorphic topological insulator KHgSb
por: Ma, Junzhang, et al.
Publicado: (2017)

Disorder Control in Crystalline GeSb(2)Te(4) Using High Pressure
por: Xu, Ming, et al.
Publicado: (2015)

Effect of Vacancy, As, and Sb Dopants on the Gold-Capturing Ability of Cu(2)S during Gold Collection in Matte Processes
por: Huang, Hui, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_p26pjqaeqgtd4guvatn1otgkdm