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Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications

We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 10(8) cm(−2), length between 3 and 3.5 μm, and diameter between 60 and 160 nm, depending on the shell growth duratio...

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Detalles Bibliográficos
Autores principales:	Moratis, K., Tan, S. L., Germanis, S., Katsidis, C., Androulidaki, M., Tsagaraki, K., Hatzopoulos, Z., Donatini, F., Cibert, J., Niquet, Y. -M., Mariette, H., Pelekanos, N. T.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2016
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4818650/ https://www.ncbi.nlm.nih.gov/pubmed/27037927 http://dx.doi.org/10.1186/s11671-016-1384-y

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