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Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable cond...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4822004/ https://www.ncbi.nlm.nih.gov/pubmed/27041485 http://dx.doi.org/10.1038/ncomms11142 |
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author | Yi, Wei Savel'ev, Sergey E. Medeiros-Ribeiro, Gilberto Miao, Feng Zhang, M.-X. Yang, J. Joshua Bratkovsky, Alexander M. Williams, R. Stanley |
author_facet | Yi, Wei Savel'ev, Sergey E. Medeiros-Ribeiro, Gilberto Miao, Feng Zhang, M.-X. Yang, J. Joshua Bratkovsky, Alexander M. Williams, R. Stanley |
author_sort | Yi, Wei |
collection | PubMed |
description | Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable conductance fluctuations and enlarged electronic noise. Here, we observe diverse conductance-dependent noise spectra, including a transition from 1/f(2) (activated transport) to 1/f (flicker noise) as a function of the frequency f, and a large peak in the noise amplitude at the conductance quantum G(Q)=2e(2)/h, in contrast to suppressed noise at the conductance quantum observed in other systems. We model the stochastic behaviour near the point contact regime using Molecular Dynamics–Langevin simulations and understand the observed frequency-dependent noise behaviour in terms of thermally activated atomic-scale fluctuations that make and break a quantum conductance channel. These results provide insights into switching mechanisms and guidance to device operating ranges for different applications. |
format | Online Article Text |
id | pubmed-4822004 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-48220042016-04-17 Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors Yi, Wei Savel'ev, Sergey E. Medeiros-Ribeiro, Gilberto Miao, Feng Zhang, M.-X. Yang, J. Joshua Bratkovsky, Alexander M. Williams, R. Stanley Nat Commun Article Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable conductance fluctuations and enlarged electronic noise. Here, we observe diverse conductance-dependent noise spectra, including a transition from 1/f(2) (activated transport) to 1/f (flicker noise) as a function of the frequency f, and a large peak in the noise amplitude at the conductance quantum G(Q)=2e(2)/h, in contrast to suppressed noise at the conductance quantum observed in other systems. We model the stochastic behaviour near the point contact regime using Molecular Dynamics–Langevin simulations and understand the observed frequency-dependent noise behaviour in terms of thermally activated atomic-scale fluctuations that make and break a quantum conductance channel. These results provide insights into switching mechanisms and guidance to device operating ranges for different applications. Nature Publishing Group 2016-04-04 /pmc/articles/PMC4822004/ /pubmed/27041485 http://dx.doi.org/10.1038/ncomms11142 Text en Copyright © 2016, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Yi, Wei Savel'ev, Sergey E. Medeiros-Ribeiro, Gilberto Miao, Feng Zhang, M.-X. Yang, J. Joshua Bratkovsky, Alexander M. Williams, R. Stanley Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors |
title | Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors |
title_full | Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors |
title_fullStr | Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors |
title_full_unstemmed | Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors |
title_short | Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors |
title_sort | quantized conductance coincides with state instability and excess noise in tantalum oxide memristors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4822004/ https://www.ncbi.nlm.nih.gov/pubmed/27041485 http://dx.doi.org/10.1038/ncomms11142 |
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