Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable cond...

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Detalles Bibliográficos
Autores principales: Yi, Wei, Savel'ev, Sergey E., Medeiros-Ribeiro, Gilberto, Miao, Feng, Zhang, M.-X., Yang, J. Joshua, Bratkovsky, Alexander M., Williams, R. Stanley
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4822004/
https://www.ncbi.nlm.nih.gov/pubmed/27041485
http://dx.doi.org/10.1038/ncomms11142

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4822004/
https://www.ncbi.nlm.nih.gov/pubmed/27041485
http://dx.doi.org/10.1038/ncomms11142

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