Cargando…
Structural properties of Sb(2)S(3) under pressure: evidence of an electronic topological transition
High-pressure Raman spectroscopy and x-ray diffraction of Sb(2)S(3) up to 53 GPa reveals two phase transitions at 5 GPa and 15 GPa. The first transition is evidenced by noticeable compressibility changes in distinct Raman-active modes, in the lattice parameter axial ratios, the unit cell volume, as...
Autores principales: | Efthimiopoulos, Ilias, Buchan, Cienna, Wang, Yuejian |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4822153/ https://www.ncbi.nlm.nih.gov/pubmed/27048930 http://dx.doi.org/10.1038/srep24246 |
Ejemplares similares
-
Sb(2)Se(3) under pressure
por: Efthimiopoulos, Ilias, et al.
Publicado: (2013) -
Topological Phase Transition in Sb(2)Mg(3) Assisted
by Strain
por: Teshome, Tamiru, et al.
Publicado: (2019) -
Excitonic and electronic transitions in Me–Sb(2)Se(3) structures
por: Syrbu, Nicolae N, et al.
Publicado: (2020) -
Superconductivity in Topological Insulator Sb(2)Te(3) Induced by Pressure
por: Zhu, J., et al.
Publicado: (2013) -
Devil's staircase transition of the electronic structures in CeSb
por: Kuroda, Kenta, et al.
Publicado: (2020)