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TiO(2)/BiVO(4) Nanowire Heterostructure Photoanodes Based on Type II Band Alignment

[Image: see text] Metal oxides that absorb visible light are attractive for use as photoanodes in photoelectrosynthetic cells. However, their performance is often limited by poor charge carrier transport. We show that this problem can be addressed by using separate materials for light absorption and...

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Detalles Bibliográficos
Autores principales: Resasco, Joaquin, Zhang, Hao, Kornienko, Nikolay, Becknell, Nigel, Lee, Hyunbok, Guo, Jinghua, Briseno, Alejandro L., Yang, Peidong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2016
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4827543/
https://www.ncbi.nlm.nih.gov/pubmed/27163032
http://dx.doi.org/10.1021/acscentsci.5b00402
Descripción
Sumario:[Image: see text] Metal oxides that absorb visible light are attractive for use as photoanodes in photoelectrosynthetic cells. However, their performance is often limited by poor charge carrier transport. We show that this problem can be addressed by using separate materials for light absorption and carrier transport. Here, we report a Ta:TiO(2)|BiVO(4) nanowire photoanode, in which BiVO(4) acts as a visible light-absorber and Ta:TiO(2) acts as a high surface area electron conductor. Electrochemical and spectroscopic measurements provide experimental evidence for the type II band alignment necessary for favorable electron transfer from BiVO(4) to TiO(2). The host–guest nanowire architecture presented here allows for simultaneously high light absorption and carrier collection efficiency, with an onset of anodic photocurrent near 0.2 V vs RHE, and a photocurrent density of 2.1 mA/cm(2) at 1.23 V vs RHE.