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Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4837644/ https://www.ncbi.nlm.nih.gov/pubmed/27094639 http://dx.doi.org/10.1038/srep23950 |
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author | Liu, Zhiqiang Yi, Xiaoyan Yu, Zhiguo Yuan, Guodong Liu, Yang Wang, Junxi Li, Jinmin Lu, Na Ferguson, Ian Zhang, Yong |
author_facet | Liu, Zhiqiang Yi, Xiaoyan Yu, Zhiguo Yuan, Guodong Liu, Yang Wang, Junxi Li, Jinmin Lu, Na Ferguson, Ian Zhang, Yong |
author_sort | Liu, Zhiqiang |
collection | PubMed |
description | |
format | Online Article Text |
id | pubmed-4837644 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-48376442016-04-27 Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides Liu, Zhiqiang Yi, Xiaoyan Yu, Zhiguo Yuan, Guodong Liu, Yang Wang, Junxi Li, Jinmin Lu, Na Ferguson, Ian Zhang, Yong Sci Rep Corrigenda Nature Publishing Group 2016-04-20 /pmc/articles/PMC4837644/ /pubmed/27094639 http://dx.doi.org/10.1038/srep23950 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Corrigenda Liu, Zhiqiang Yi, Xiaoyan Yu, Zhiguo Yuan, Guodong Liu, Yang Wang, Junxi Li, Jinmin Lu, Na Ferguson, Ian Zhang, Yong Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides |
title | Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides |
title_full | Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides |
title_fullStr | Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides |
title_full_unstemmed | Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides |
title_short | Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides |
title_sort | corrigendum: impurity resonant states p-type doping in wide-band-gap nitrides |
topic | Corrigenda |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4837644/ https://www.ncbi.nlm.nih.gov/pubmed/27094639 http://dx.doi.org/10.1038/srep23950 |
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