Cargando…
Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
Autores principales: | Liu, Zhiqiang, Yi, Xiaoyan, Yu, Zhiguo, Yuan, Guodong, Liu, Yang, Wang, Junxi, Li, Jinmin, Lu, Na, Ferguson, Ian, Zhang, Yong |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4837644/ https://www.ncbi.nlm.nih.gov/pubmed/27094639 http://dx.doi.org/10.1038/srep23950 |
Ejemplares similares
-
Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
por: Liu, Zhiqiang, et al.
Publicado: (2016) -
Corrigendum: Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution
por: Zhang, Feng, et al.
Publicado: (2016) -
Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides
por: Liu, Zhiqiang, et al.
Publicado: (2016) -
CORRIGENDUM: New high Tc multiferroics KBiFe2O5 with narrow band gap and promising photovoltaic effect
por: Zhang, Ganghua, et al.
Publicado: (2013) -
CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
por: Lee, Eunha, et al.
Publicado: (2014)