A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffe...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Wenliang, Wang, Haiyan, Yang, Weijia, Zhu, Yunnong, Li, Guoqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4840314/
https://www.ncbi.nlm.nih.gov/pubmed/27101930
http://dx.doi.org/10.1038/srep24448

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4840314/
https://www.ncbi.nlm.nih.gov/pubmed/27101930
http://dx.doi.org/10.1038/srep24448

Ejemplares similares