Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which re...

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Detalles Bibliográficos
Autores principales: Liu, Xinke, Ang, Kah-Wee, Yu, Wenjie, He, Jiazhu, Feng, Xuewei, Liu, Qiang, Jiang, He, Dan Tang, Wen, Jiao, Lu, Youming, Liu, Wenjun, Cao, Peijiang, Han, Shun, Wu, Jing, Wang, Xi, Zhu, Deliang, He, Zhubing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4840359/
https://www.ncbi.nlm.nih.gov/pubmed/27102711
http://dx.doi.org/10.1038/srep24920

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