Cargando…
Quantum simulation of the Hubbard model with dopant atoms in silicon
In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose–Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin li...
Autores principales: | Salfi, J., Mol, J. A., Rahman, R., Klimeck, G., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4842981/ https://www.ncbi.nlm.nih.gov/pubmed/27094205 http://dx.doi.org/10.1038/ncomms11342 |
Ejemplares similares
-
Valley interference and spin exchange at the atomic scale in silicon
por: Voisin, B., et al.
Publicado: (2020) -
Probing
the Atomic Arrangement of Subsurface Dopants
in a Silicon Quantum Device Platform
por: Røst, Håkon I., et al.
Publicado: (2023) -
Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots
por: Wang, Xiqiao, et al.
Publicado: (2022) -
Tunable quantum criticalities in an isospin extended Hubbard model simulator
por: Li, Qiao, et al.
Publicado: (2022) -
A surface code quantum computer in silicon
por: Hill, Charles D., et al.
Publicado: (2015)