Cargando…
Nanoscale electron transport at the surface of a topological insulator
The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other t...
Autores principales: | Bauer, Sebastian, Bobisch, Christian A. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4844676/ https://www.ncbi.nlm.nih.gov/pubmed/27098939 http://dx.doi.org/10.1038/ncomms11381 |
Ejemplares similares
-
Interplay of orbital effects and nanoscale strain in topological crystalline insulators
por: Walkup, Daniel, et al.
Publicado: (2018) -
Engineering Dirac electrons emergent on the surface of a topological insulator
por: Yoshimura, Yukinori, et al.
Publicado: (2015) -
Gate-tuned normal and superconducting transport at the surface of a topological insulator
por: Sacépé, Benjamin, et al.
Publicado: (2011) -
Probing the electronic transport on the reconstructed Au/Ge(001) surface
por: Krok, Franciszek, et al.
Publicado: (2014) -
Collective excitations on a surface of topological insulator
por: Efimkin, Dmitry K, et al.
Publicado: (2012)