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Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor
Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4845026/ https://www.ncbi.nlm.nih.gov/pubmed/27114052 http://dx.doi.org/10.1038/srep24981 |