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Vertically Free-Standing Ordered Pb(Zr(0.52)Ti(0.48))O(3) Nanocup Arrays by Template-Assisted Ion Beam Etching

In this report, vertically free-standing lead zirconate titanate Pb(Zr(0.52)Ti(0.48))O(3) (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(−2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide...

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Detalles Bibliográficos
Autores principales: Zhang, Xiaoyan, Tang, Dan, Huang, Kangrong, Hu, Die, Zhang, Fengyuan, Gao, Xingsen, Lu, Xubing, Zhou, Guofu, Zhang, Zhang, Liu, Junming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4846609/
https://www.ncbi.nlm.nih.gov/pubmed/27117635
http://dx.doi.org/10.1186/s11671-016-1369-x
Descripción
Sumario:In this report, vertically free-standing lead zirconate titanate Pb(Zr(0.52)Ti(0.48))O(3) (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(−2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.