Temperature Dependence of the Hall and Longitudinal Resistances in a Quantum Hall Resistance Standard

We present detailed measurements of the temperature dependence of the Hall and longitudinal resistances on a quantum Hall device [(GaAs(7)] which has been used as a resistance standard at NIST. We find a simple power law relationship between the change in Hall resistance and the longitudinal resista...

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Detalles Bibliográficos
Autores principales: Matthews, J., Cage, M. E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 2005
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4847578/
https://www.ncbi.nlm.nih.gov/pubmed/27308175
http://dx.doi.org/10.6028/jres.110.078
Descripción
Sumario:We present detailed measurements of the temperature dependence of the Hall and longitudinal resistances on a quantum Hall device [(GaAs(7)] which has been used as a resistance standard at NIST. We find a simple power law relationship between the change in Hall resistance and the longitudinal resistance as the temperature is varied between 1.4 K and 36 K. This power law holds over seven orders of magnitude change in the Hall resistance. We fit the temperature dependence above about 4 K to thermal activation, and extract the energy gap and the effective g-factor.

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