Epitaxial growth and magnetic properties of ultraviolet transparent Ga(2)O(3)/(Ga(1−x)Fe(x))(2)O(3) multilayer thin films

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga(2)O(3)/(Ga(1−x)Fe(x))(2)O(3) multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga(2)O(3) layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of [Image: see text] crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga(2)O(3)/(Ga(1−x)Fe(x))(2)O(3) multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga(2)O(3).