Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS

Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage V(T) and the radiation-induced charge density is nearly six times larger than that of standard metal–oxide–nitride–oxide–silicon MONOS devices. The decrease of V(T) for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal–oxide–hafnium oxide–oxide–silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future.