A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier

A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is ve...

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Detalles Bibliográficos
Autores principales: Lioe, De Xing, Mars, Kamel, Kawahito, Shoji, Yasutomi, Keita, Kagawa, Keiichiro, Yamada, Takahiro, Hashimoto, Mamoru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4851046/
https://www.ncbi.nlm.nih.gov/pubmed/27089339
http://dx.doi.org/10.3390/s16040532

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4851046/
https://www.ncbi.nlm.nih.gov/pubmed/27089339
http://dx.doi.org/10.3390/s16040532

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