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A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier

A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is ve...

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Detalles Bibliográficos
Autores principales:	Lioe, De Xing, Mars, Kamel, Kawahito, Shoji, Yasutomi, Keita, Kagawa, Keiichiro, Yamada, Takahiro, Hashimoto, Mamoru
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4851046/ https://www.ncbi.nlm.nih.gov/pubmed/27089339 http://dx.doi.org/10.3390/s16040532

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