Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

In this study, films of gallium oxide (Ga(2)O(3)) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga(2)O(3) thin films were investigated; the saturation growth displayed a linear depe...

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Detalles Bibliográficos
Autores principales: Shih, Huan-Yu, Chu, Fu-Chuan, Das, Atanu, Lee, Chia-Yu, Chen, Ming-Jang, Lin, Ray-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4851678/
https://www.ncbi.nlm.nih.gov/pubmed/27129687
http://dx.doi.org/10.1186/s11671-016-1448-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4851678/
https://www.ncbi.nlm.nih.gov/pubmed/27129687
http://dx.doi.org/10.1186/s11671-016-1448-z

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