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Detector Development for the abBA Experiment

We have developed a new type of field-expansion spectrometer to measure the neutron beta decay correlations (a, b, B, and A). A precision measurement of these correlations places stringent requirements on charged particle detectors. The design employs large area segmented silicon detectors to detect...

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Detalles Bibliográficos
Autores principales: Seo, P.-N., Bowman, J. D., Mitchell, G. S., Penttila, S. I., Wilburn, W. S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 2005
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4852838/
https://www.ncbi.nlm.nih.gov/pubmed/27308162
http://dx.doi.org/10.6028/jres.110.065
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author Seo, P.-N.
Bowman, J. D.
Mitchell, G. S.
Penttila, S. I.
Wilburn, W. S.
author_facet Seo, P.-N.
Bowman, J. D.
Mitchell, G. S.
Penttila, S. I.
Wilburn, W. S.
author_sort Seo, P.-N.
collection PubMed
description We have developed a new type of field-expansion spectrometer to measure the neutron beta decay correlations (a, b, B, and A). A precision measurement of these correlations places stringent requirements on charged particle detectors. The design employs large area segmented silicon detectors to detect both protons and electrons in coincidence. Other requirements include good energy resolution (< 5 keV), a thin dead layer to allow observation of 30-keV protons, fast timing resolution (~1 ns) to reconstruct electron-backscattering events, and nearly unity efficiency. We report results of testing commercially available surface-barrier silicon detectors for energy resolution and timing performance, and measurement of the dead-layer thickness of ion-implanted silicon detectors with a 3.2 MeV alpha source.
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spelling pubmed-48528382016-06-15 Detector Development for the abBA Experiment Seo, P.-N. Bowman, J. D. Mitchell, G. S. Penttila, S. I. Wilburn, W. S. J Res Natl Inst Stand Technol Article We have developed a new type of field-expansion spectrometer to measure the neutron beta decay correlations (a, b, B, and A). A precision measurement of these correlations places stringent requirements on charged particle detectors. The design employs large area segmented silicon detectors to detect both protons and electrons in coincidence. Other requirements include good energy resolution (< 5 keV), a thin dead layer to allow observation of 30-keV protons, fast timing resolution (~1 ns) to reconstruct electron-backscattering events, and nearly unity efficiency. We report results of testing commercially available surface-barrier silicon detectors for energy resolution and timing performance, and measurement of the dead-layer thickness of ion-implanted silicon detectors with a 3.2 MeV alpha source. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 2005 2005-08-01 /pmc/articles/PMC4852838/ /pubmed/27308162 http://dx.doi.org/10.6028/jres.110.065 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Seo, P.-N.
Bowman, J. D.
Mitchell, G. S.
Penttila, S. I.
Wilburn, W. S.
Detector Development for the abBA Experiment
title Detector Development for the abBA Experiment
title_full Detector Development for the abBA Experiment
title_fullStr Detector Development for the abBA Experiment
title_full_unstemmed Detector Development for the abBA Experiment
title_short Detector Development for the abBA Experiment
title_sort detector development for the abba experiment
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4852838/
https://www.ncbi.nlm.nih.gov/pubmed/27308162
http://dx.doi.org/10.6028/jres.110.065
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