Sn-doped Bi(1.1)Sb(0.9)Te(2)S bulk crystal topological insulator with excellent properties

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surfac...

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Detalles Bibliográficos
Autores principales: Kushwaha, S. K., Pletikosić, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Yao, Zhao, He, Burch, K. S., Lin, Jingjing, Wang, Wudi, Ji, Huiwen, Fedorov, A. V., Yazdani, Ali, Ong, N. P., Valla, T., Cava, R. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4853473/
https://www.ncbi.nlm.nih.gov/pubmed/27118032
http://dx.doi.org/10.1038/ncomms11456

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4853473/
https://www.ncbi.nlm.nih.gov/pubmed/27118032
http://dx.doi.org/10.1038/ncomms11456

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