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Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique

In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 10(11) cm(−2) for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface conditio...

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Detalles Bibliográficos
Autores principales: Chen, Hugo Juin-Yu, Yang, Dian-Long, Huang, Tseh-Wet, Yu, Ing-Song
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4854854/
https://www.ncbi.nlm.nih.gov/pubmed/27142879
http://dx.doi.org/10.1186/s11671-016-1455-0

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