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Tunnel electroresistance through organic ferroelectrics
Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volat...
Autores principales: | , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4857482/ https://www.ncbi.nlm.nih.gov/pubmed/27143121 http://dx.doi.org/10.1038/ncomms11502 |
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author | Tian, B. B. Wang, J. L. Fusil, S. Liu, Y. Zhao, X. L. Sun, S. Shen, H. Lin, T. Sun, J. L. Duan, C. G. Bibes, M. Barthélémy, A. Dkhil, B. Garcia, V. Meng, X. J. Chu, J. H. |
author_facet | Tian, B. B. Wang, J. L. Fusil, S. Liu, Y. Zhao, X. L. Sun, S. Shen, H. Lin, T. Sun, J. L. Duan, C. G. Bibes, M. Barthélémy, A. Dkhil, B. Garcia, V. Meng, X. J. Chu, J. H. |
author_sort | Tian, B. B. |
collection | PubMed |
description | Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates. |
format | Online Article Text |
id | pubmed-4857482 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-48574822016-05-23 Tunnel electroresistance through organic ferroelectrics Tian, B. B. Wang, J. L. Fusil, S. Liu, Y. Zhao, X. L. Sun, S. Shen, H. Lin, T. Sun, J. L. Duan, C. G. Bibes, M. Barthélémy, A. Dkhil, B. Garcia, V. Meng, X. J. Chu, J. H. Nat Commun Article Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates. Nature Publishing Group 2016-05-04 /pmc/articles/PMC4857482/ /pubmed/27143121 http://dx.doi.org/10.1038/ncomms11502 Text en Copyright © 2016, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Tian, B. B. Wang, J. L. Fusil, S. Liu, Y. Zhao, X. L. Sun, S. Shen, H. Lin, T. Sun, J. L. Duan, C. G. Bibes, M. Barthélémy, A. Dkhil, B. Garcia, V. Meng, X. J. Chu, J. H. Tunnel electroresistance through organic ferroelectrics |
title | Tunnel electroresistance through organic ferroelectrics |
title_full | Tunnel electroresistance through organic ferroelectrics |
title_fullStr | Tunnel electroresistance through organic ferroelectrics |
title_full_unstemmed | Tunnel electroresistance through organic ferroelectrics |
title_short | Tunnel electroresistance through organic ferroelectrics |
title_sort | tunnel electroresistance through organic ferroelectrics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4857482/ https://www.ncbi.nlm.nih.gov/pubmed/27143121 http://dx.doi.org/10.1038/ncomms11502 |
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