Cargando…
Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory
The bottom-up approach using self-assembled materials/processes is thought to be a promising solution for next-generation device fabrication, but it is often found to be not feasible for use in real device fabrication. Here, we report a feasible and versatile way to fabricate high-density, nanoscale...
Autores principales: | Han, Un-Bin, Lee, Jang-Sik |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4860564/ https://www.ncbi.nlm.nih.gov/pubmed/27157385 http://dx.doi.org/10.1038/srep25537 |
Ejemplares similares
-
Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications
por: Han, Un-Bin, et al.
Publicado: (2016) -
Efficient Fabrication Process of Ordered Metal Nanodot Arrays for Infrared Plasmonic Sensor
por: Yoshino, Masahiko, et al.
Publicado: (2019) -
Switching nanoscale temperature fields with high-order plasmonic modes in transition metal nanorods
por: Setoura, Kenji, et al.
Publicado: (2023) -
A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
por: Hua, Qilin, et al.
Publicado: (2019) -
Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth
por: Song, Ji-Min, et al.
Publicado: (2016)