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Depth profiles of the interfacial strains of Si(0.7)Ge(0.3)/Si using three-beam Bragg-surface diffraction
Interfacial strains are important factors affecting the structural and physical properties of crystalline multilayers and heterojunctions, and the performance of the devices made of multilayers used, for example, in nanowires, optoelectronic components, and many other applications. Currently existin...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4860642/ https://www.ncbi.nlm.nih.gov/pubmed/27156699 http://dx.doi.org/10.1038/srep25580 |