Cargando…
A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture
We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I–V characteristics compared to a common field effect transistor. The photoresponse beh...
Autores principales: | Ye, Daqian, Mei, Zengxia, Liang, Huili, liu, Lishu, Zhang, Yonghui, Li, Junqiang, Liu, Yaoping, Gu, Changzhi, Du, Xiaolong |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4867501/ https://www.ncbi.nlm.nih.gov/pubmed/27181255 http://dx.doi.org/10.1038/srep26169 |
Ejemplares similares
-
Probing Defects in Nitrogen-Doped Cu(2)O
por: Li, Junqiang, et al.
Publicado: (2014) -
Maskless inverted pyramid texturization of silicon
por: Wang, Yan, et al.
Publicado: (2015) -
ZnO-Based Ultraviolet Photodetectors
por: Liu, Kewei, et al.
Publicado: (2010) -
Ultraviolet photodetectors based on ZnO nanorods-seed layer effect and metal oxide modifying layer effect
por: Zhou, Hai, et al.
Publicado: (2011) -
Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg(0.51)Zn(0.49)O active components
por: Liu, Lishu, et al.
Publicado: (2015)