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Geometric conductive filament confinement by nanotips for resistive switching of HfO(2)-RRAM devices with high performance

Filament-type HfO(2)-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies...

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Detalles Bibliográficos
Autores principales:	Niu, Gang, Calka, Pauline, Auf der Maur, Matthias, Santoni, Francesco, Guha, Subhajit, Fraschke, Mirko, Hamoumou, Philippe, Gautier, Brice, Perez, Eduardo, Walczyk, Christian, Wenger, Christian, Di Carlo, Aldo, Alff, Lambert, Schroeder, Thomas
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4867633/ https://www.ncbi.nlm.nih.gov/pubmed/27181525 http://dx.doi.org/10.1038/srep25757

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