On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

[Image: see text] We report an on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal–silicon Schottky photodetectors operated in the same conditions. At a re...

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Detalles Bibliográficos
Autores principales: Goykhman, Ilya, Sassi, Ugo, Desiatov, Boris, Mazurski, Noa, Milana, Silvia, de Fazio, Domenico, Eiden, Anna, Khurgin, Jacob, Shappir, Joseph, Levy, Uriel, Ferrari, Andrea C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2016
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4868376/
https://www.ncbi.nlm.nih.gov/pubmed/27053042
http://dx.doi.org/10.1021/acs.nanolett.5b05216
Descripción
Sumario:[Image: see text] We report an on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal–silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

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