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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed...

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Detalles Bibliográficos
Autores principales: Li, Huijie, Zhao, Guijuan, Wei, Hongyuan, Wang, Lianshan, Chen, Zhen, Yang, Shaoyan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4880805/
https://www.ncbi.nlm.nih.gov/pubmed/27229517
http://dx.doi.org/10.1186/s11671-016-1482-x
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author Li, Huijie
Zhao, Guijuan
Wei, Hongyuan
Wang, Lianshan
Chen, Zhen
Yang, Shaoyan
author_facet Li, Huijie
Zhao, Guijuan
Wei, Hongyuan
Wang, Lianshan
Chen, Zhen
Yang, Shaoyan
author_sort Li, Huijie
collection PubMed
description The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting a GaN/Ti interlayer, the nanowire alignment can be greatly improved as indicated by scanning electron microscopy and X-ray diffraction.
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spelling pubmed-48808052016-06-21 Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates Li, Huijie Zhao, Guijuan Wei, Hongyuan Wang, Lianshan Chen, Zhen Yang, Shaoyan Nanoscale Res Lett Nano Express The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting a GaN/Ti interlayer, the nanowire alignment can be greatly improved as indicated by scanning electron microscopy and X-ray diffraction. Springer US 2016-05-26 /pmc/articles/PMC4880805/ /pubmed/27229517 http://dx.doi.org/10.1186/s11671-016-1482-x Text en © Li et al. 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Li, Huijie
Zhao, Guijuan
Wei, Hongyuan
Wang, Lianshan
Chen, Zhen
Yang, Shaoyan
Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
title Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
title_full Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
title_fullStr Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
title_full_unstemmed Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
title_short Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
title_sort growth of well-aligned inn nanorods on amorphous glass substrates
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4880805/
https://www.ncbi.nlm.nih.gov/pubmed/27229517
http://dx.doi.org/10.1186/s11671-016-1482-x
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