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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots

ABSTRACT: Ultrasmall microring and microdisk lasers with an asymmetric air/GaAs/Al(0.98)Ga(0.02)As waveguide and an active region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μm were fabricated and studied. The diameter D of the microrings and microdisks was either 2 or 1.5 μm, and the...

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Detalles Bibliográficos
Autores principales: Maximov, Mikhail V, Kryzhanovskaya, Natalia V, Nadtochiy, Alexey M, Moiseev, Eduard I, Shostak, Ivan I, Bogdanov, Andrey A, Sadrieva, Zarina F, Zhukov, Alexey E, Lipovskii, Andrey A, Karpov, Denis V, Laukkanen, Janne, Tommila, Juha
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer New York 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4883690/
https://www.ncbi.nlm.nih.gov/pubmed/26264786
http://dx.doi.org/10.1186/1556-276X-9-657
Descripción
Sumario:ABSTRACT: Ultrasmall microring and microdisk lasers with an asymmetric air/GaAs/Al(0.98)Ga(0.02)As waveguide and an active region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μm were fabricated and studied. The diameter D of the microrings and microdisks was either 2 or 1.5 μm, and the inner diameter d of the microrings varied from 20% to 70% of the outer diameter D. The microring with D = 2 μm and d = 0.8 μm demonstrated a threshold pump power as low as 1.8 μW at room temperature. Lasing was observed up to 100°C owing to the use of quantum dots providing high confinement energy both for electrons and holes. Tuning spectral positions of the whispering gallery modes via changing the inner diameters of the microrings was demonstrated. PACS: 78.67.Hc; 42.55.Sa; 42.50.Pq; 78.55.Cr ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1186/1556-276X-9-657) contains supplementary material, which is available to authorized users.