Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum d...

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Detalles Bibliográficos
Autores principales: Wang, Peng, Pan, Wenwu, Wu, Xiaoyan, Liu, Juanjuan, Cao, Chunfang, Wang, Shumin, Gong, Qian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889962/
https://www.ncbi.nlm.nih.gov/pubmed/27255900
http://dx.doi.org/10.1186/s11671-016-1470-1
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author Wang, Peng
Pan, Wenwu
Wu, Xiaoyan
Liu, Juanjuan
Cao, Chunfang
Wang, Shumin
Gong, Qian
author_facet Wang, Peng
Pan, Wenwu
Wu, Xiaoyan
Liu, Juanjuan
Cao, Chunfang
Wang, Shumin
Gong, Qian
author_sort Wang, Peng
collection PubMed
description InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.
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spelling pubmed-48899622016-06-17 Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots Wang, Peng Pan, Wenwu Wu, Xiaoyan Liu, Juanjuan Cao, Chunfang Wang, Shumin Gong, Qian Nanoscale Res Lett Nano Express InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface. Springer US 2016-06-02 /pmc/articles/PMC4889962/ /pubmed/27255900 http://dx.doi.org/10.1186/s11671-016-1470-1 Text en © Wang et al. 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Wang, Peng
Pan, Wenwu
Wu, Xiaoyan
Liu, Juanjuan
Cao, Chunfang
Wang, Shumin
Gong, Qian
Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
title Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
title_full Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
title_fullStr Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
title_full_unstemmed Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
title_short Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
title_sort influence of gaasbi matrix on optical and structural properties of inas quantum dots
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889962/
https://www.ncbi.nlm.nih.gov/pubmed/27255900
http://dx.doi.org/10.1186/s11671-016-1470-1
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