Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum d...

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Detalles Bibliográficos
Autores principales: Wang, Peng, Pan, Wenwu, Wu, Xiaoyan, Liu, Juanjuan, Cao, Chunfang, Wang, Shumin, Gong, Qian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889962/
https://www.ncbi.nlm.nih.gov/pubmed/27255900
http://dx.doi.org/10.1186/s11671-016-1470-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889962/
https://www.ncbi.nlm.nih.gov/pubmed/27255900
http://dx.doi.org/10.1186/s11671-016-1470-1

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