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Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures

The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiO(x) light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si−SiO(x) structures w...

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Autores principales: Michailovska, Katerina, Indutnyi, Ivan, Shepeliavyi, Petro, Sopinskyy, Mykola
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889963/
https://www.ncbi.nlm.nih.gov/pubmed/27255897
http://dx.doi.org/10.1186/s11671-016-1496-4
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author Michailovska, Katerina
Indutnyi, Ivan
Shepeliavyi, Petro
Sopinskyy, Mykola
author_facet Michailovska, Katerina
Indutnyi, Ivan
Shepeliavyi, Petro
Sopinskyy, Mykola
author_sort Michailovska, Katerina
collection PubMed
description The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiO(x) light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si−SiO(x) structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiO(x)) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiO(x) nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.
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spelling pubmed-48899632016-06-17 Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures Michailovska, Katerina Indutnyi, Ivan Shepeliavyi, Petro Sopinskyy, Mykola Nanoscale Res Lett Nano Express The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiO(x) light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si−SiO(x) structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiO(x)) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiO(x) nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect. Springer US 2016-06-02 /pmc/articles/PMC4889963/ /pubmed/27255897 http://dx.doi.org/10.1186/s11671-016-1496-4 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Michailovska, Katerina
Indutnyi, Ivan
Shepeliavyi, Petro
Sopinskyy, Mykola
Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
title Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
title_full Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
title_fullStr Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
title_full_unstemmed Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
title_short Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
title_sort polarization memory effect in the photoluminescence of nc-si−sio(x) light-emitting structures
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889963/
https://www.ncbi.nlm.nih.gov/pubmed/27255897
http://dx.doi.org/10.1186/s11671-016-1496-4
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