Cargando…
Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures
The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiO(x) light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si−SiO(x) structures w...
Autores principales: | , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889963/ https://www.ncbi.nlm.nih.gov/pubmed/27255897 http://dx.doi.org/10.1186/s11671-016-1496-4 |
_version_ | 1782435043625402368 |
---|---|
author | Michailovska, Katerina Indutnyi, Ivan Shepeliavyi, Petro Sopinskyy, Mykola |
author_facet | Michailovska, Katerina Indutnyi, Ivan Shepeliavyi, Petro Sopinskyy, Mykola |
author_sort | Michailovska, Katerina |
collection | PubMed |
description | The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiO(x) light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si−SiO(x) structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiO(x)) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiO(x) nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect. |
format | Online Article Text |
id | pubmed-4889963 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-48899632016-06-17 Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures Michailovska, Katerina Indutnyi, Ivan Shepeliavyi, Petro Sopinskyy, Mykola Nanoscale Res Lett Nano Express The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiO(x) light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si−SiO(x) structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiO(x)) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiO(x) nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect. Springer US 2016-06-02 /pmc/articles/PMC4889963/ /pubmed/27255897 http://dx.doi.org/10.1186/s11671-016-1496-4 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Michailovska, Katerina Indutnyi, Ivan Shepeliavyi, Petro Sopinskyy, Mykola Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures |
title | Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures |
title_full | Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures |
title_fullStr | Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures |
title_full_unstemmed | Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures |
title_short | Polarization memory effect in the photoluminescence of nc-Si−SiO(x) light-emitting structures |
title_sort | polarization memory effect in the photoluminescence of nc-si−sio(x) light-emitting structures |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4889963/ https://www.ncbi.nlm.nih.gov/pubmed/27255897 http://dx.doi.org/10.1186/s11671-016-1496-4 |
work_keys_str_mv | AT michailovskakaterina polarizationmemoryeffectinthephotoluminescenceofncsisioxlightemittingstructures AT indutnyiivan polarizationmemoryeffectinthephotoluminescenceofncsisioxlightemittingstructures AT shepeliavyipetro polarizationmemoryeffectinthephotoluminescenceofncsisioxlightemittingstructures AT sopinskyymykola polarizationmemoryeffectinthephotoluminescenceofncsisioxlightemittingstructures |