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Degradation of GaAs/AlGaAs Quantized Hall Resistors With Alloyed AuGe/Ni Contacts
Careful testing over a period of 6 years of a number of GaAs/AlGaAs quantized Hall resistors (QHR) made with alloyed AuGe/Ni contacts, both with and without passivating silicon nitride coatings, has resulted in the identification of important mechanisms responsible for degradation in the performance...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
1998
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4890946/ https://www.ncbi.nlm.nih.gov/pubmed/28009368 http://dx.doi.org/10.6028/jres.103.012 |