Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface

Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries us...

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Detalles Bibliográficos
Autores principales: Sun, Ce, Paulauskas, Tadas, Sen, Fatih G., Lian, Guoda, Wang, Jinguo, Buurma, Christopher, Chan, Maria K. Y., Klie, Robert F., Kim, Moon J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4891715/
https://www.ncbi.nlm.nih.gov/pubmed/27255415
http://dx.doi.org/10.1038/srep27009

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4891715/
https://www.ncbi.nlm.nih.gov/pubmed/27255415
http://dx.doi.org/10.1038/srep27009

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