Ultrahigh photoconductivity of bandgap-graded CdS(x)Se(1−x) nanowires probed by terahertz spectroscopy

Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report t...

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Detalles Bibliográficos
Autores principales: Liu, Hongwei, Lu, Junpeng, Yang, Zongyin, Teng, Jinghua, Ke, Lin, Zhang, Xinhai, Tong, Limin, Sow, Chorng Haur
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4893690/
https://www.ncbi.nlm.nih.gov/pubmed/27263861
http://dx.doi.org/10.1038/srep27387

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4893690/
https://www.ncbi.nlm.nih.gov/pubmed/27263861
http://dx.doi.org/10.1038/srep27387

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