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Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As

Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the...

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Detalles Bibliográficos
Autores principales:	Souma, S., Chen, L., Oszwałdowski, R., Sato, T., Matsukura, F., Dietl, T., Ohno, H., Takahashi, T.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4893692/ https://www.ncbi.nlm.nih.gov/pubmed/27265402 http://dx.doi.org/10.1038/srep27266

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