Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance the stability, it is important to understand the mechanism...

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Detalles Bibliográficos
Autores principales: Lee, Keundong, Tchoe, Youngbin, Yoon, Hosang, Baek, Hyeonjun, Chung, Kunook, Lee, Sangik, Yoon, Chansoo, Park, Bae Ho, Yi, Gyu-Chul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4895219/
https://www.ncbi.nlm.nih.gov/pubmed/27271792
http://dx.doi.org/10.1038/srep27451

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4895219/
https://www.ncbi.nlm.nih.gov/pubmed/27271792
http://dx.doi.org/10.1038/srep27451

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