Self-Heating and Failure in Scalable Graphene Devices

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure...

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Detalles Bibliográficos
Autores principales: Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., Howell, Stephen W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899688/
https://www.ncbi.nlm.nih.gov/pubmed/27279020
http://dx.doi.org/10.1038/srep26457
Descripción
Sumario:Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

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