Self-Heating and Failure in Scalable Graphene Devices

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure...

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Detalles Bibliográficos
Autores principales: Beechem, Thomas E., Shaffer, Ryan A., Nogan, John, Ohta, Taisuke, Hamilton, Allister B., McDonald, Anthony E., Howell, Stephen W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899688/
https://www.ncbi.nlm.nih.gov/pubmed/27279020
http://dx.doi.org/10.1038/srep26457
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author Beechem, Thomas E.
Shaffer, Ryan A.
Nogan, John
Ohta, Taisuke
Hamilton, Allister B.
McDonald, Anthony E.
Howell, Stephen W.
author_facet Beechem, Thomas E.
Shaffer, Ryan A.
Nogan, John
Ohta, Taisuke
Hamilton, Allister B.
McDonald, Anthony E.
Howell, Stephen W.
author_sort Beechem, Thomas E.
collection PubMed
description Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.
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spelling pubmed-48996882016-06-13 Self-Heating and Failure in Scalable Graphene Devices Beechem, Thomas E. Shaffer, Ryan A. Nogan, John Ohta, Taisuke Hamilton, Allister B. McDonald, Anthony E. Howell, Stephen W. Sci Rep Article Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices. Nature Publishing Group 2016-06-09 /pmc/articles/PMC4899688/ /pubmed/27279020 http://dx.doi.org/10.1038/srep26457 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Beechem, Thomas E.
Shaffer, Ryan A.
Nogan, John
Ohta, Taisuke
Hamilton, Allister B.
McDonald, Anthony E.
Howell, Stephen W.
Self-Heating and Failure in Scalable Graphene Devices
title Self-Heating and Failure in Scalable Graphene Devices
title_full Self-Heating and Failure in Scalable Graphene Devices
title_fullStr Self-Heating and Failure in Scalable Graphene Devices
title_full_unstemmed Self-Heating and Failure in Scalable Graphene Devices
title_short Self-Heating and Failure in Scalable Graphene Devices
title_sort self-heating and failure in scalable graphene devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899688/
https://www.ncbi.nlm.nih.gov/pubmed/27279020
http://dx.doi.org/10.1038/srep26457
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