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A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires
The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devi...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899728/ https://www.ncbi.nlm.nih.gov/pubmed/27279431 http://dx.doi.org/10.1038/srep27506 |