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A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devi...

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Detalles Bibliográficos
Autores principales: Saranti, Konstantina, Alotaibi, Sultan, Paul, Shashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4899728/
https://www.ncbi.nlm.nih.gov/pubmed/27279431
http://dx.doi.org/10.1038/srep27506

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