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Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

[Image: see text] In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si hetero...

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Autores principales: Glaser, Markus, Kitzler, Andreas, Johannes, Andreas, Prucnal, Slawomir, Potts, Heidi, Conesa-Boj, Sonia, Filipovic, Lidija, Kosina, Hans, Skorupa, Wolfgang, Bertagnolli, Emmerich, Ronning, Carsten, Fontcuberta i Morral, Anna, Lugstein, Alois
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2016
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4901366/
https://www.ncbi.nlm.nih.gov/pubmed/27168031
http://dx.doi.org/10.1021/acs.nanolett.6b00315
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author Glaser, Markus
Kitzler, Andreas
Johannes, Andreas
Prucnal, Slawomir
Potts, Heidi
Conesa-Boj, Sonia
Filipovic, Lidija
Kosina, Hans
Skorupa, Wolfgang
Bertagnolli, Emmerich
Ronning, Carsten
Fontcuberta i Morral, Anna
Lugstein, Alois
author_facet Glaser, Markus
Kitzler, Andreas
Johannes, Andreas
Prucnal, Slawomir
Potts, Heidi
Conesa-Boj, Sonia
Filipovic, Lidija
Kosina, Hans
Skorupa, Wolfgang
Bertagnolli, Emmerich
Ronning, Carsten
Fontcuberta i Morral, Anna
Lugstein, Alois
author_sort Glaser, Markus
collection PubMed
description [Image: see text] In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.
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spelling pubmed-49013662016-06-16 Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures Glaser, Markus Kitzler, Andreas Johannes, Andreas Prucnal, Slawomir Potts, Heidi Conesa-Boj, Sonia Filipovic, Lidija Kosina, Hans Skorupa, Wolfgang Bertagnolli, Emmerich Ronning, Carsten Fontcuberta i Morral, Anna Lugstein, Alois Nano Lett [Image: see text] In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes. American Chemical Society 2016-05-11 2016-06-08 /pmc/articles/PMC4901366/ /pubmed/27168031 http://dx.doi.org/10.1021/acs.nanolett.6b00315 Text en Copyright © 2016 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
spellingShingle Glaser, Markus
Kitzler, Andreas
Johannes, Andreas
Prucnal, Slawomir
Potts, Heidi
Conesa-Boj, Sonia
Filipovic, Lidija
Kosina, Hans
Skorupa, Wolfgang
Bertagnolli, Emmerich
Ronning, Carsten
Fontcuberta i Morral, Anna
Lugstein, Alois
Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
title Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
title_full Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
title_fullStr Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
title_full_unstemmed Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
title_short Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
title_sort synthesis, morphological, and electro-optical characterizations of metal/semiconductor nanowire heterostructures
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4901366/
https://www.ncbi.nlm.nih.gov/pubmed/27168031
http://dx.doi.org/10.1021/acs.nanolett.6b00315
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